 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 1 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited figure 1. package type of az1117b sot-223 general description the az1117b is a low dropout three-terminal regula- tor. the az1117b has been optimized for low voltage where transient response and minimum input voltage are critical. it provides curr ent limit and thermal shut- down. its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1%. on-chip thermal shutdown provides protection against a combination of high curr ent and ambien t temperature that would create excessive junction temperature. the az1117b is available in 1.2v, 1.5v, 1.8v, 2.5v, 3.3v, 5.0v fixed output voltage vesions and adj out- put voltage version. the fixed versions integrate the adjust resistors. it is also available in an adjustable ver- sion which can set the output voltage with two external resistors. the az1117b is available in the industry-standard sot-223, to-252-2 (1), to-252-2 (3) and sot-89 power packages. features current limit: 1.0a (typ.) output noise from 10hz to 10khz: 0.003% of v out psrr at i out =300ma and f=120hz: 70db output voltage accuracy: 1% on-chip thermal shutdown maximum quiescent current: i qmax =6ma operation junction temperature: -20 to 125 o c applications usb device add-on card dvd player pc motherboard to-252-2 (1) sot-89 to-252-2 (3)
600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 2 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited figure 2. pin configuration of az1117b (top view) h package (sot-223) pin configuration vout input output adj/gnd 1 2 3 r package (sot-89) 1 2 3 input output adj/gnd vout (to-252-2 (1)) vout input output adj/gnd 1 2 3 input output adj/gnd vout 1 2 3 (to-252-2 (3)) d package 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 3 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet functional block diagram figure 3. functional block diagram of az1117b thermal protection + - for adjustable output, disconnect a1 and a2, connect b input output adj/gnd a1 a2 b for fixed output, connect a1 and a2, disconnect b 2 1 3 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 4 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited circuit type package h: sot-223 adj: adjustable output 1.8: fixed output 1.8v e1: lead free az1117b - tr: tape and reel ordering information 3.3: fixed output 3.3v package temperature range part number marking id packing type sot-223 -20 to 125 o c az1117bh-adjtre1 eh17k tape & reel az1117bh-1.2tre1 eh17p tape & reel az1117bh-1.5tre1 eh17q tape & reel az1117bh-1.8tre1 eh17l tape & reel az1117bh-2.5tre1 eh17n tape & reel az1117bh-3.3tre1 eh17m tape & reel az1117bh-5.0tre1 eh17r tape & reel to-252-2 (1)/ to-252-2 (3) -20 to 125 o c az1117bd-adje1 az1117bd-adje1 tube az1117bd-adjtre1 az1117bd-adje1 tape & reel az1117bd-1.2e1 az1117bd-1.2e1 tube az1117bd-1.2tre1 az1117bd-1.2e1 tape & reel az1117bd-1.5e1 az1117bd-1.5e1 tube az1117bd-1.5tre1 az1117bd-1.5e1 tape & reel az1117bd-1.8e1 az1117bd-1.8e1 tube az1117bd-1.8tre1 az1117bd-1.8e1 tape & reel az1117bd-2.5e1 az1117bd-2.5e1 tube az1117bd-2.5tre1 az1117bd-2.5e1 tape & reel az1117bd-3.3e1 az1117bd-3.3e1 tube az1117bd-3.3tre1 az1117bd-3.3e1 tape & reel az1117bd-5.0e1 az1117bd-5.0e1 tube az1117bd-5.0tre1 az1117bd-5.0e1 tape & reel 2.5: fixed output 2.5v 5.0: fixed output 5.0v 1.2: fixed output 1.2v 1.5: fixed output 1.5v d: to-252-2 (1)/(3) r: sot-89 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 5 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet ordering information(continued) package temperature range part number marking id packing type sot-89 -20 to 125 o c az1117br-adjtre1 e31f tape & reel az1117br-1.2tre1 e31g tape & reel az1117br-1.5tre1 e31h tape & reel az1117br-1.8tre1 e31j tape & reel az1117br-2.5tre1 e31k tape & reel az1117br-3.3tre1 e31l tape & reel az1117br-5.0tre1 e31m tape & reel bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 6 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited absolute maximum ratings (note 1) note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, a nd functional operation of the device at these or any other conditions beyond those indicated under "recommended operating c onditions" is not implied. e xposure to "absolute maximum ratings" for extended periods may affect device reliability. recommended oper ating conditions parameter symbol min max unit input voltage v in 15 v operating junction temperature range t j -20 125 o c parameter symbol value unit input voltage v in 18 v operating junction temperature range t j 150 o c storage temperature range t stg -65 to 150 o c thermal resistance (no heatsink) ja sot-223 150 o c/w to-252-2(1)/ to-252-2(3) 128 sot-89 210 lead temperature (soldering, 10sec) t lead 260 o c 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 7 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit reference voltage v ref 1.238 1.250 1.262 v 1.5v v in -v out 10v 1.225 1.250 1.270 line regulation v rline 1.5v v in -v out 10v 0.001 0.1 % 0.2 load regulation v rload 0.4 1.0 % dropout voltage v drop ? v ref =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a adjust pin current 60 120 a adjust pin current change 1.5v ( v in -v out ) 10v 0.2 5 a minimum load current 1.5v ( v in -v out ) 10v 1.7 5 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics az1117b-adj electrical characteristics operating conditions: v in =v out +2v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junctio n temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 8 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 1.176 1.2 1.224 v 3.2v v in 10v 1.152 1.2 1.228 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-1.2 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 9 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 1.485 1.5 1.515 v 3.5v v in 10v 1.470 1.5 1.530 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-1.5 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 10 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 1.782 1.8 1.818 v 3.8v v in 10v 1.764 1.8 1.836 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-1.8 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 11 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 2.475 2.5 2.525 v 4.5v v in 10v 2.455 2.5 2.545 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-2.5 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwise specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 12 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 3.267 3.3 3.333 v 5.3v v in 10v 3.235 3.3 3.365 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-3.3 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwis e specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 13 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out 4.950 5.0 5.050 v 6.5v v in 10v 4.900 5.0 5.100 line regulation v rline 1.5v v in -v out 10v 0.5 6 mv 10 load regulation v rload 2 15 mv dropout voltage v drop ? v out =1%, i out =0.8a sot-223 1.2 1.3 v to-252-2(1) 1.4 to-252-2(3) 1.4 sot-89 1.2 current limit i limit 0.85 1 1.15 a quiescent current i q i out =0 4 6 ma ripple rejection psrr f=120hz, c out =22 f ( v in -v out )= 3v, i out =300ma 70 db temperature stability 0.5 % rms output noise (% of v out ) t a =25 o c, 10hz f 10 khz 0.003 % thermal shutdown junction temperature 160 o c thermal shutdown hysteresis 16 o c thermal resistance jc sot-223 33 o c/w to-252-2 (1) 22 to-252-2 (3) 22 sot-89 39 electrical characteristics (continued) az1117b-5.0 electrical characteristics operating conditions: v in 10v, i out =10ma, t j =25 o c, unless otherwis e specified. (p maximum power dissipation). limits appearing in boldface type apply over the entire junc tion temperature range for operation, -20 o c to 125 o c. 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 14 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited typical performance characteristics figure 5. load regulation vs. junction temperature figure 4. line regulation vs. junction temperature figure 6. reference voltage vs. junction temperature figure 7. output voltage vs. junction temperature -20 0 20 40 60 80 100 120 -25 -20 -15 -10 -5 0 5 10 load regulation(mv) junction temperature( o c) az1117b-2.5v v in =4.5v i out =10ma-800ma -20 0 20 40 60 80 100 120 1.220 1.225 1.230 1.235 1.240 1.245 1.250 1.255 1.260 1.265 1.270 az1117b-adj v in =4.5v i out =10ma reference voltage (v) junction temperature ( o c) reference voltage -20 0 20 40 60 80 100 120 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 az1117b-2.5v v in =4.5v i out =10ma output voltage (v) junction temperature ( o c) 10ma -20 0 20 40 60 80 100 120 -0.4 -0.2 0.0 0.2 0.4 line regulation(mv) junction temperature( o c) az1117b-2.5v v in =4.5v~10v i out =10ma 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 15 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet figure 11. power dissipation vs. case temperature figure 10. dropout voltage vs. output current typical performance ch aracteristics (continued) figure 8. minimum load current vs. junction temperature figure 9. adjust pin current vs. junction temperature 0 100 200 300 400 500 600 700 800 900 1000 0.8 0.9 1.0 1.1 1.2 1.3 1.4 dropout voltage (v) output current (ma) az1117b-2.5 v in =4.5v -40 o c -25 o c 25 o c 100 o c sot-223 -20 0 20 40 60 80 100 120 -2 -1 0 1 2 3 az1117b-adj v in =4.5v minimum load current(ma) junction temperature( o c) minimum load current -20 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 az1117b-adj v in =4.5v adjust pin current( a) junction temperature( o c) -20 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 az1117-2.5v sot-223 no heatsink power dissipation (w) case temperature ( o c) 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 16 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited figure 12. line transient response figure 13. load transient response figure 14. psrr vs. frequency figure 15. cu rrent limit vs. junction temperature 10 100 1k 10k 100k 10 20 30 40 50 60 70 80 psrr (db) frequency (hz) typical performance ch aracteristics (continued) time (20 s/div) time (10 s/div) ? v out (0.1v/div) 5.3 4.8 v in ( 0 . 5 v / d i v ) -0.1 4.3 3.8 0.1 0.2 0 ? v out (50mv/div) i out (0.3a/div) 0.3 0 -50 -0.3 -0.6 50 100 0 0.6 10ma -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 current limit (a) junction temperature( o c) az1117b-2.5v v in =4.5v no heatsink @v out =v out (nom)x98% 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 17 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) -20 0 20 40 60 80 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 dropout voltage (v) junction temperature ( o c) az1117b-2.5 100ma 400ma 600ma 800ma sot-223 figure 16. dropout voltage vs. junction temperature 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 18 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited typical applications figure 17. typical applications of az1117b az1117b-adj v in v out adj v in =11v 10 f r1 124 ? r2 768 ? 22 f 9v ++ ++ v in =5.3v az1117b-3.3 v in v out gnd 10 f 22 f 3.3v v out =v ref * ( 1+r2/r1) + i adj * r2 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 19 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet mechanical dimensions sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) typ 6.300(0.248) 6.700(0.264) 1.750(0.069) typ 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 3 5 0 ( 0 . 0 1 4 ) 0.250(0.010) 0 10 0.900(0.035) min 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 20 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited mechanical dimens ions (continued) unit: mm(inch) to-252-2 (1) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 4.500(0.177) 4.700(0.165) 3 4 3.800ref(0.150ref) 4.800(0.189) 6.500(0.256) 4.300(0.169) 5.400(0.212) 1.400(0.055) 1.780(0.070) 0.000(0.000) 0.127(0.005) 0.430(0.017) 0.580(0.023) 2.300typ 9.500(0.374) 9.900(0.390) 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 5.200(0.205) 5.400(0.213) 6.350(0.250) 6.650(0.262) 2.550(0.100) 2.900(0.114) 5.400(0.213) 5.700(0.224) 2.200(0.087) 2.400(0.094) 5 5 8 0.430(0.017) 0.580(0.023) 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m low dropout linear regulator az1117b 21 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited data sheet mechanical dimens ions (continued) unit: mm(inch) to-252-2 (3) 1.290.1 2.900ref 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.025) 5 9 0 8 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700ref 5.250ref 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) bsc 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800ref 8 0 0.600(0.024) 1.000(0.039) 7 3 9 5 600ma low dropout linear regulator ap2317 600ma low dropout linear regulator ap1117m data sheet low dropout linear regulator az1117b 22 jul. 2010 rev. 1. 9 bcd semiconductor manufacturing limited mechanical dimens ions (continued) unit: mm(inch) sot-89 1.400(0.055)* 1.630(0.064) 4.400(0.173) 0.360(0.014) 0.440(0.017) 3.000(0.118) 0 . 9 0 0 ( 0 . 0 3 5 ) 2 . 3 0 0 ( 0 . 0 9 1 ) 3 . 9 5 0 ( 0 . 1 5 6 ) 1.400(0.055) 0.360(0.014) 1 0 3 1 0 r0.200(0.008) r0.150(0.006) 0 . 0 0 0 ( 0 . 0 0 0 ) 3 1.600(0.063) 0.440(0.017) 0.560(0.022) 2 . 6 0 0 ( 0 . 1 0 2 ) 0.520(0.020) 4.600(0.181) 1.830(0.072) 1 . 2 0 0 ( 0 . 0 4 7 ) 4 . 2 5 0 ( 0 . 1 6 7 ) 0 . 0 7 6 ( 0 . 0 0 3 ) 0.360(0.014) 0.480(0.019) important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited |
Price & Availability of AZ1117BH-18TRE1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |